absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage 600 v i t(rms) r.m.s on-state current t c = 116 c 1.5 a i tsm surge on-state current one cycle, 50hz/60hz, peak, non-repetitive 13/15 a i 2 t i 2 t t =10ms 0.5 a 2 s p gm peak gate power dissipation 1.0 w p g(av) average gate power dissipati on over any 20ms period 0.1 w i gm peak gate current 0.5 a v gm peak gate voltage 6.0 v t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c STR2A60 oct, 2003. rev. 3 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 1.5 a ) high commutation dv/dt general description this device is suitable for low power ac switching applica- tion, phase control application such as fan speed and tem- perature modulation control, lighting control and static switching relay. 2.t2 3.gate 1.t1 symbol 1/5 semiwell semiconductor bi-directional triode thyristor copyright@semiwell semiconductor co., ltd., all rights reserved. to-126 3 2 1
electrical characteristics symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v d = v drm , single phase, half wave t j = 125 c 0.5 ma v tm peak on-state voltage i t = 2.1 a, inst. measurement 1.6 v i + gt1 gate trigger current v d = 6 v, r l =10 20 ma i - gt1 20 i - gt3 20 v + gt1 gate trigger voltage v d = 6 v, r l =10 1.5 v v - gt1 1.5 v - gt3 1.5 v gd non-trigger gate voltage t j = 125 c, v d = 1/2 v drm 0.2 v (dv/dt)c critical rate of rise off-state voltage at commutation t j = 125 c, [di/dt]c = -0.75 a/ms, v d =2/3 v drm 5.0 v/ ? i h holding current 5 ma r th(j-c) thermal impedance junction to case 3.5 c/w STR2A60 2/5
-50 0 50 100 150 0.1 1 10 v gt (t o c) v + gt1 v - gt1 v - gt3 v gt (25 o c) junction temperature [ o c] 10 0 10 1 10 2 0 2 4 6 8 10 12 14 16 60hz 50hz surge on-state current [a] time (cycles) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 115.0 117.5 120.0 122.5 125.0 127.5 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o allowable case temperature [ o c] rms on-state current [a] 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 = 90 o = 150 o = 60 o = 30 o = 180 o = 120 o power dissipation [w] rms on-state current [a] 0.51.01.52.02.53.03.54.04.55.0 10 -1 10 0 10 1 125 o c 25 o c on-state current [a] on-state voltage [v] 10 1 10 2 10 3 10 -1 10 0 10 1 25 p g(av) = 0.1w p gk = 1w i gm =500ma v gk = 6v v gd = 0.2v gate voltage [v] gate current [ma] STR2A60 3/5 fig 1. gate characteristics fig 2. on-state voltage fig 3. on state current vs. maximum power dissipation fig 4. on state current vs. allowable case temperature fig 5. surge on-sta te current rating ( non-repetitive ) fig 6. gate trigger voltage vs. junction temperature 2 360 : conduction angle 2 360 : conduction angle
4/5 STR2A60 fig 8. transient thermal impedance fig 7. gate trigger current vs. junction temperature fig 9. gate trigger characteristics test circuit a v 10 ? 6v r g a v 10 ? 6v r g a v 10 ? 6v r g test procedure test procedure test procedure -50 0 50 100 150 0.1 1 10 i + gt1 i - gt1 i - gt3 i gt (t o c) i gt (25 o c) junction temperature [ o c] 10 -2 10 -1 10 0 10 1 10 2 1 10 transient thermal impedance [ o c/w] time (sec)
dim. mm inch min. typ. max. min. typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 j 0.48 0.62 0.019 0.024 k 0.7 0.86 0.028 0.034 l 1.4 0.055 3.2 0.126 5/5 STR2A60 to-126 package dimension 1. gate 2. t2 3. t1 a b c d e f g 3 2 1 h i j k l
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